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Cree Introduces Industry's First 1.7-kV, All-SiC Power Module

Half-bridge module enables reductions in cost and size for high-power motor-drive and grid-tie inverter applications

Cree has released an all-SiC, 1.7kV power module in an industry-standard 62mm housing. Powered by the company's C2M large-area SiC chip technology, the new half-bridge module exhibits 8mΩ on-resistance and ten-times higher switching efficiency than existing Si module technology, capable of replacing Si IGBT modules rated at 400A or more.

The performance of the new 1.7kV all-SiC power module allows design engineers to simultaneously reduce the size and cost of magnetic and cooling elements while achieving superior system efficiency and reliability, says Cree. Unlike existing silicon-based systems in motor-drive, grid-tie and utility-scale-solar-inverter applications, the new Cree power module also enables lower production costs and the development of smaller, lighter products with a lower overall total cost of ownership.

"The introduction of Cree's all-SiC, 1700V power module opens the door for SiC devices to become the switching device of choice for high-power motor drives," said Devin Dilley, director of medium voltage R&D for Vacon, a global supplier in the premium AC drives market. "The application of these modules in SiC-based motor drives will enable a reduction in the size and cost of filter components by up to 40 percent while simultaneously increasing system efficiency."

The superior switching efficiency and voltage capability of this new module enables simplified, two-level topologies that are feasible at higher frequencies, eliminating the need to invest in complex, multi-level silicon-based solutions. The high power density that can be achieved with Cree's newest half-bridge module further simplifies the implementation of modular system designs and enables extremely low mean time to repair for high overall system availability.

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