Silvaco Joins Japanese Gallium Oxide project
Aims to establish technologies for Ga2O3 power devices by 2018
MM Silvaco Japan has joined Japan's Strategic Innovation Promotion (SIP) program project "˜Research and Development on Fundamental Technologies of Gallium Oxide Power Devices'.
Promoted by New Energy and Industrial Technology Development Organisation (NEDO), the project also includes the National Institute of Information and Communication Technology, Tamura Corporation, Tokyo University of Agriculture and Technology and New Japan Radio.
Transistors and diodes with Ga2O3 - a new semiconductor material with wide band gap - are expected to have higher breakdown voltage, higher output and lower dissipation compared to traditional compound semiconductor devices. Moreover, it is theoretically possible with ß-Ga2O3 to create large diameter single crystalline substrates by melt growth method, at low energy and for a low cost, enabling production of bulk single crystal. These characteristics will have significant advantages for industrial applications.
The National Institute of Information and Communication Technology, Tamura and KOHA have already successfully developed the world's first MOSFET using Ga2O3. The SIP project's aim is to establish the fundamental technologies for Ga2O3 power devices by fiscal year 2018.
"Silvaco has many years of experience in the development, sales and technical support of semiconductor process and device simulators," commented Iliya Pesic, President of Silvaco Japan. "Silvaco has key advantages in simulation technology for silicon and compound semiconductor power devices. Silvaco's leading edge technologies with proven performance in wide band gap semiconductors will enable it to make a significant contribution to the project."
