Freescale's RF GaN Transistor operates over 200 to 2500MHz
125W continuous wave transistor suited for multi-octave wideband RF amplifiers
Freescale Semiconductor has introduced what is claims is the industry's highest thermal and wideband performance GaN device with a 125W continuous wave (CW) GaN-on-SiC transistor.
By offering extended operational bandwidth, the new MMRF5014H is suited for use in wideband amplifiers in scientific equipment, as well as in military communications products for the US defence sector including jammers, radar implementations and electronic warfare systems.
The reference circuit demonstrates a performance of 100W CW power over 200-2500MHz bandwidth with greater than 12 dB gain across the band. The transistor is designed to deliver 58 percent efficiency and to easily achieve power levels in excess of 125W in narrower band applications. In addition, the device delivers best-in-class thermal performance of less than 1degC/W and offers VSWR ruggedness of 20:1.
"Radios today typically require multiple RF amplifiers to cover a wide frequency spectrum, but with the new MMRF5014H, only one is needed," said Paul Hart, senior vice president and general manager of Freescale's RF group. "Size, weight and power upgrades are critical for our customers, and by replacing several amplifiers with a single device, the MMRF5014H helps across all three of these factors."
This new GaN product is the first of several that Freescale plans to introduce to help customers push the current boundaries of performance while addressing the size, weight and power requirements of the defence industry and other markets.