Scientists integrate colour-tunable, InGaN nanowire LED arrays onto silicon
Laterally-arranged multi-colour subpixels enable controlled light mixing at the chip-level
Researchers at McGill University, the New Jersey Institute of Technology, and Samsung Advanced Institute of Technology have demonstrated controllable and tunable full colour light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire LEDs.
The multi-colour nanowire LED arrays were fabricated directly on a silicon substrate using a three-step selective area MBE growth process. According to the team, the lateral-arranged, multi-colour subpixels enable controlled light mixing at the chip-level and yield colour-tunable light emission with correlated colour temperature (CCT) values in the range from 1900 K to 6800 K, while maintaining excellent colour rendering capability.
For each nanowire LED, they showed that the emission spectrum can be tailored by varying the sizes and/or compositions of the dots.
The researchers say that such miniaturised RGB nanowire LED arrays would be well suited for future smart lighting, display, and imaging applications.
"˜Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon' by Renjie Wang et al, appeared in
Optics Express, Vol. 22, Issue S7, http://dx.doi.org/10.1364/OE.22.0A1768
