+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

Fraunhofer Institute selects Veeco MOCVD system for nitride R&D

Leading III-V research institution buys TurboDisc K465i GaN MOCVD System

Veeco Instruments announced today that the Fraunhofer Institute for Applied Solid State Physics IAF, a leading German compound semiconductor research institution, has purchased a TurboDisc K465i GaN MOCVD System.

Located in Freiburg, Germany, Fraunhofer conducts cutting-edge research in the field of III-V semiconductors. It develops electronic and optoelectronic devices based on modern micro and nanostructures for applications such as security, energy, communication, health, and mobility.

"After more than a decade of research in the field of nitride epitaxy on sapphire, silicon and SiC substrates, we have decided to upgrade our operation to include Veeco's MOCVD technology," said Martin Walther, head of the epitaxy department and deputy director at Fraunhofer.  "The K465i offers a clean process and exceptional run-to-run repeatability that will enable us to achieve new levels of development in high growth markets."

Veeco's award-winning K465i MOCVD systems feature excellent film quality, low defects and high productivity, which are key for effective GaN processing. The system also incorporates Veeco's Uniform FlowFlange technology for superior uniformity and excellent run-to-run repeatability. Since its introduction in 2010, the K465i has been the top selling MOCVD system worldwide.

"Being selected by a leading compound semiconductor institution such as Fraunhofer Institute is further evidence that Veeco's leading MOCVD systems are the ideal solution for various GaN-based epitaxy applications," said Jim Jenson, senior VP, general manager, Veeco MOCVD. 

"We strive to provide innovative process solutions, including the recent introduction of the Propel PowerGaN MOCVD system for power electronics devices. As we innovate, our TurboDisc and Propel platforms provide outstanding performance for compound semi R&D and production leaders."

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news 22645 more articles
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: