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TI reveals 80V half-bridge GaN FET module

Fully integrated GaN FET power-stage prototype enables power designers to quickly realise the benefits of GaN

Texas Instruments has introduced an 80V, 10A integrated GaN FET power-stage prototype, which consists of a high-frequency driver and two GaN FETs in a half-bridge configuration - all in an quad flat no-leads (QFN) package.

According to TI, the new LMG5200 GaN FET power stage will help accelerate market adoption of next-generation GaN power-conversion solutions that provide increased power density and efficiency in space-constrained, high-frequency industrial and telecom applications.

The power stage will be highlighted as part of a 48-V digital power demonstration at the Applied Power Electronics Conference (APEC), in Charlotte, North Carolina, March 16-18.

"One of the biggest barriers to GaN-based power design has been the uncertainties around driving GaN FETs and the resulting parasitics due to packaging and design layout," said Steve Lambouses, vice president of TI's High-Voltage Power Solutions business. 

"We help power designers realize the full power potential of GaN technology by offering them a complete, reliable power-conversion ecosystem of optimised integrated modules, drivers and high-frequency controllers in advanced, easy-to-design packaging."

Typically, designers who use GaN FETs that switch at high frequencies must be careful with board layout to avoid ringing and electromagnetic interference (EMI). TI says its LMG5200 dual 80V power stage prototype significantly eases this issue while increasing power-stage efficiency by reducing packaging parasitic inductances in the critical gate-drive loop.

The LMG5200 features multichip packaging technology and is optimised to support power-conversion topologies with frequencies up to 5MHz.

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