+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

Infineon expands GaN-on-Silicon portfolio

Company unveils energy-efficient enhancement mode and cascode configuration GaN-on-Silicon platforms at APEC 2015

Infineon Technologies has announced the expansion of its GaN-on-Silicon technology and product portfolio with both enhancement mode and cascode configuration GaN-based platforms.

These are optimised for high performance applications requiring superior levels of energy efficiency including Switch Mode Power Supplies used in server, telecom, mobile power and consumer goods such as Class D Audio systems. According to Infineon, GaN technology significantly reduces the size and weight of power supplies, which will open up new opportunities in end-products such as ultra-thin LED TVs.

"Infineon's GaN-on-Silicon portfolio combined with the acquisition of International Rectifier's GaN platform together with our partnership with Panasonic clearly positions Infineon as the technology leader in this promising GaN market," stated Andreas Urschitz, president of the power management and multimarket division of Infineon Technologies AG.

"In line with our 'Product to System' approach, our customers can now choose enhancement mode or cascode configuration technologies according to their application/system requirements. At the same time, Infineon is committed to developing Surface Mount Device (SMD) packages and ICs that will further leverage the superior performance of GaN in a compact footprint. As a real world example, using our GaN technology, a laptop charger found on the market today could be replaced by one that is up to four times smaller and lighter," he added.

Infineon's expanded offering will include dedicated driver and controller ICs. It is further enhanced by a broader patent portfolio, GaN-on-Silicon epitaxy process and 100V-600V technologies resulting from the acquisition of International Rectifier. Additionally, through a strategic partnership with Panasonic Corporation, Infineon and Panasonic will jointly introduce devices using Panasonic's normally-off (enhancement mode) GaN-on-Silicon transistor structure integrated into Infineon's Surface Mount Device (SMD) packages.

As a result, Infineon says it now offers customers complete system know-how combined with the most comprehensive range of GaN technologies and products in the industry. Additionally, the company holds best-in-class manufacturing capabilities, volume capacity and second sourcing for normally-off GaN power devices in an Infineon SMD package.

According to an IHS market research report, the GaN-on-Silicon market for power semiconductors is expected to grow at a compound annual growth rate (CAGR) of more than 50 percent, leading to an extension of volume from US$15 million in 2014 to US$800 million by 2023.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: