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GaN-on-silicon at PCIM Europe

EpiGan to demonstrate GaN-on-Si epi wafers for 650V HEMTs

EpiGaN, the Belgian developer of III/V materials technology, has announced that it will be demonstrating GaN-on-silicon epi-wafers that meet industrial specifications for HEMTs at 650V at PCIM Europe (19 "“ 21 May 2015 Nuremberg, Germany).

EpiGaN produces advanced GaN-on-silicon and GaN-on-SiC epitaxial wafers and delivers them to integrated device manufacturers to build high-performance power switching systems, as well as RF power devices for millimeter-wave applications. EpiGaN has patented its GaN epiwafer technology to enable its customers to successfully position themselves in new and rapidly growing market segments.

According to the company, an important competitive advantage of EpiGaN's GaN-on-silicon (up to 200mm diameter) and GaN on SiC epi-wafers produced in MOCVD reactors is that they are compatible with the existing standard silicon-CMOS production infrastructure. This means IDMs can continue to use their investment in silicon processing lines.

This advantage arises from in-situ SiN layering, a key concept of EpiGaN's epi-wafer technology, which provides superior surface passivation and device reliability, and enables contamination-free processing. In-situ SiN structuring allows the use of pure AlN layers as a barrier material, with the resulting hetero-structures having a sheet resistance below 250 Ohm/sq.

"Even best-in-class silicon devices are approaching their theoretical limits," says EpiGaN cofounder and CEO Marianne Germain. "We supply industry-leading GaN-on-Si and GaN-on-SiC epi-wafers to the semiconductor industry to build the next generation of power switching and RF power systems, offering better power handling, higher conversion efficiency and lower volume and weight."

 

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