Freescale Introduces plastic-packaged RF GaN Transistors
Freescale Semiconductor has introduced two ultra-wideband RF power GaN transistors in advanced plastic packages.
"The industry-leading bandwidth of these two products will enable our customers to replace two or even three separate RF PA's with a single RF lineup, vastly reducing system cost," said Paul Hart, senior vice president and general manager of Freescale's RF business. "In addition, the devices' ultra-low thermal resistance will allow customers to reduce the cost of their cooling systems, or run at full CW-rated power to much higher case temperatures."
The new OM-270 package, offered in two-lead and eight-lead configurations, extends Freescale's proprietary OMNI RF plastic packaging technology to the smallest outline yet, and adds compatibility with GaN.
"We have innovated the capability to metalurgically bond our GaN-on-SiC chips to copper flanges, and over-mold them to enable unprecedented thermal performance," said Mali Mahalingam, Freescale Fellow and head of RF package development. "In addition, this new package platform supports complex internal matching schemes that enable superior broadband performance."
The MMRF5015N is a 100W, 50V, true CW ultra-wideband GaN transistor suited for high power military and civil communication systems. The MMRF5015N has a thermal resistance of less than 0.8degC/W, which represents a >30 percent improvement over competitive products. The MMRF5015N is sampling now in an evaluation fixture which demonstrates 200-2500 MHz bandwidth with a minimum of 12dB gain and 40 percent efficiency over the entire band.
MMRF5011N is a 10W, 28V, true CW ultra-wideband transistor, demonstrating 200-2600 MHz bandwidth in an available applications circuit. Suited for lower power military and civil handheld radio communications devices, the MMRF5011 is sampling now.
Freescale is displaying and demonstrating these transistors at the 2015 International Microwave Symposium (IMS).