Macom samples 4th Gen 100W GaN-on-Si transistor
RF, microwave and optical semiconductor company Macom has announced it is sampling the MAGX-100027-100C0P, a wideband transistor optimised for DC to 2.7GHz operation and built using the company's 4th generation GaN-on-Silicon technology. This GaN-on-Si HEMT D-Mode transistor is suited for defence communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
The MAGX-100027-100C0P supports CW, pulsed, and linear operation with output power levels up to 100W (50 dBm). Featuring 50 V operation, this device offers CW operation of 18.3dB gain at 2.45GHz, and 70 percent drain efficiency. For pulsed operation, the MAGX-100027-100C0P boasts 18.4dB gain at 2.7GHz and 71 percent drain efficiency. This 100 percent RF tested transistor is available in an industry standard plastic package with bolt down flange.
4th generation GaN is said to deliver performance that rivals more expensive GaN-on-SiC at a projected volume production cost structure below that of incumbent LDMOS technology. Gen4 GaN delivers greater than 70 percent peak efficiency and 19dB gain for modulated signals at 2.7GHz, which is similar to GaN-on-SiC technologies, and more than 10 percentage points greater efficiency than LDMOS, according to Macom. It also delivers power density that is more than four times that of LDMOS.
"This Gen4 GaN transistor provides optimal performance for customers," said Gary Lopes, product manager, Macom. "The MAGX-100027-100C0P is an ideal candidate for customers looking to support rugged applications and experience the solid reliability that is offered by Macom GaN solutions. Gen4 GaN products extend the innovation and commercialisation trajectories of earlier generations of GaN-on-Si, which have demonstrated clear, field-proven reliability in harsh environmental conditions for more than five years."
