High-volume Manufacturing Award
ENTRY: PlasmaPro100 Polaris Etch System
Last year Oxford Instruments announced the development of a SiC via plasma etch process using its PlasmaPro100 Polaris system.
SiC is becoming an increasingly important material, particularly for high performance GaN RF devices using SiC as a substrate. A smooth via etch through the SiC is essential to the functioning of these devices.
Capabilities of Oxford Instruments' SiC via process include high SiC etch rate enabling maximum throughput; smooth sidewalls for problem free post etch metallisation; and high selectivity to underlying GaN layer giving a smooth, low damage stop onto the GaN device layers.
Other features include clamping of sapphire carriers using Oxford Instruments' unique patented Electrostatic Clamp technology ensuring good sample temperature control and maximum yield; the capability of etching SiC and GaN in the same tool through advanced plasma source technology; and high utilisation provided by long Mean Time Between Cleans (MTBC).
