EPC Space releases new rad-hard GaN devices
EPC Space has introduced two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions. These devices are available in hermetic packages in very small footprints.
The EPC7020G is a 200V, 14.5 mΩ, 200A pulsed radiation-hardened GaN transistor and the EPC7030G is a 300V, 32 mΩ, 200A pulsed radiation-hardened GaN transistor. These devices join the 40V, 4.5 mΩ EPC7019G and the 100V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.
“The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.