Teledyne e2v HiRel expands space GaN HEMTs
Additional packaged GaN HEMTs for hi-rel applications now available off the shelf with Space Screening Flow
Teledyne e2v HiRel has announces new space screened versions of its 100V, 90A and 650V, 30A high reliability GaN HEMTs.
The new parts go through NASA Level 1 or ESA Class 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications include battery management, dc-dc converters, and space motor drives.
Two new 100V parts are available with both bottom-side and top-side cooled packaging. One new 650V 30A GaN-on-Silicon power transistor is available in a bottom-side cooled package. Each device is available with options for EAR99 or European sourcing.
Teledyne e2v HiRel’s GaN HEMTs feature single wafer lot traceability, extended temperature performance from -55 to +125°C, and low inductance, low thermal resistance packaging.
“Our customers have embraced the previous release of 650 V space screened devices, and we have expanded our portfolio to provide additional options. These GaN HEMT products save customers time and money by providing standard devices without the need for additional screening,” said Mont Taylor, VP of business development for Teledyne e2v HiRel. “Our expanded catalog with standard burn-in make it easy for designers to utilise the latest in GaN in their designs.”
