WIN Semis releases moisture-rugged GaAs pHEMT tech
WIN Semiconductors has announced the beta release of a moisture rugged 0.1µm pHEMT technology, PP10-29.
Building on the mature and production proven PP10 platform, this new technology incorporates WIN’s second-generation humidity resistance process, EMRII, to provide mechanical protection and moisture ruggedness at the wafer-level.
To minimise added parasitic capacitance, the EMRII layers form localised air-cavities over all transistors to provide moisture resistance with minimal impact to gain, noise figure and output power. This key feature of PP10-29 mitigates amplifier performance changes from packaging, plastic encapsulation or PCB embedding, and accelerates new product development.
The core of PP10-29 is a versatile 0.1µm-gate D-mode with ft/fmax of 145GHz and 180GHz respectively and is qualified for 4V operation. Manufactured on 150mm GaAs substrates, this platform offers two interconnect metal layers, air-bridge crossovers, precision TaN resistors, monolithic PN-junction diodes for compact on-chip ESD protection circuits and through wafer vias for low inductance grounding. Providing a path to new packaging and assembly options, PP10-29 supports multiple DC and RF I/O configurations including standard wire-bonding, frontside Cu-bumps/RDL, and through-chip RF and DC transitions.
PP10-29 is available for early access MPW runs. Qualifications testing is complete and final modeling/PDK generation is expected to conclude in August 2024 with full production release scheduled for late Q3 ’24.
WIN Semiconductors will be showing its compound semiconductor RF and mm-Wave solutions at the IMS 2024, in Washington, DC, June 16th through June 21st.
