European consortium kicks off THz InP project
A European research and industry consortium led by semiconductor materials firm Soitec, has begun work to develop a future generation of high-frequency semiconductors based on InP.
These technologies are set to address applications ranging from photonics for mega data centers and AI to radio frequency front-ends and integrated antennas critical for 6G mobile communication, Sub-THz radar sensing and beyond.
InP devices can operate at frequencies approaching or exceeding 1 terahertz (THz), offering superior speeds and increased energy-efficiency compared to silicon technologies.
The 27-member consortium, Move2THz, aims to lay the groundwork for a robust European supply and manufacturing ecosystem for InP semiconductors and tackle barriers to their wider adoption, including the cost and availability of InP-based advanced substrates. The three-year project is a recipient of European Union funding as well as top-up financing from the governments of France, Switzerland, Germany, Sweden, the Netherlands and Belgium.
Emmanuelle Bely, Soitec general Secretary, said: “This project marks a key milestone in the integration of ever more powerful and energy-efficient semiconductor technologies. Together, we are paving the way for innovation based on InP that will transform critical sectors such as 6G telecommunications, photonics and artificial intelligence.
"Furthermore, it fully embodies our shared ambition to create a strong and autonomous European ecosystem capable of meeting the technical and economic challenges to large-scale adoption of these cutting-edge technologies."
