Toshiba drives ‘Excellence in Power’ at PCIM 2025
Toshiba Electronics Europe is introducing a number of solutions to enable engineers to meet their system efficiency and sustainability goals at PCIM 2025 in Nuremberg, Germany (May 6-8, 2025).
These include the latest in wide-bandgap technology including recent advances in 6-inch diameter SiC, also the next generation of silicon MOSFETs and a focus on motor control related applications.
“Excellence in power – over its 150-year history, this is what Toshiba stands for,” says Armin Derpmanns, VP marketing and operations, Toshiba. “Innovative technologies and solutions, highest quality levels, and low-carbon footprint products support engineers in enhancing performance, reliability, and sustainability to build an all-electric society.”
In addition to advances in 6-inch diameter SiC and 8- and 12-inch silicon wafer production, the company will show examples of new IGBT/FRD, RC-IGBT and SiC MOSFET dies.
In terms of modules, samples of a 2-in-1 SiC module with pin fin cooler will be displayed. Visitors to the stand will be able to examine a mock-up of the new 1200V/350A middle voltage multi-chip package (MV-MCP) with double-sided heat dissipation, designed for xEV traction inverter applications.
Additionally, visitors to the booth can explore how Toshiba’s SmartMCD, featuring an integrated microcontroller with a gate driver, contributes to a higher efficiency for automotive motor applications, offering space and system cost savings.
The industrial area will include a new cordless power tool demo, demonstrating how Toshiba’s three-phase brushless DC (BLDC) motor drive circuit enables compact yet highly efficient motor control.
The display also features the Click boards demonstrator. Toshiba's specialists will be on hand to explain how evaluation and prototyping boards, developed in collaboration with its partner MIKROE, can simplify the design process for engineers working on automotive and industrial motor control applications. The latest addition to the family, Clicker 4 Inverter Shield 2 extension board, illustrates how it can enable the precise and reliable control of BLDC motors for electric power steering (EPS), powered brakes, and pumps.
The energy (WBG) sector of Toshiba’s stand spotlights high power intelligent flexible package low voltage (iXPLV), and E3D SiC MOSFET modules.
For xEV inverter designers, Toshiba will be giving a presentation, titled: ‘Impact of SBD embedding into SiC MOSFETs on dynamic behaviour at High Temperature’ taking place on 6th May between 11:20 and 11:40. Shunsuke Asaba will share research findings indicating that recovery loss remains constant across temperatures and consistent turn-on loss is therefore anticipated in inverter circuits regardless of temperature.
For those interested in the latest Toshiba power electronics and semiconductor device modelling developments, Kazuyasu Takimoto will present a poster session in the foyer: ‘Accurate IGBT Circuit Model Considering Impact of Dynamic Avalanche Phenomenon’. It takes place during the Modelling and Simulations II session on May 8th, which runs from 11:15 to 12:45.
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