40V GaN FET targets legacy silicon strongholds
Efficient Power Conversion (EPC) has announced the availability of the EPC2366, a 40V, 0.8 mΩ GaN device designed to displace legacy low voltage silicon MOSFETs in demanding applications such as high-performance DC-DC converters and synchronous rectifiers.
The company describes the new devices as having industry-leading RDS(on) x QG figure of merit (10 mΩ·nC), zero reverse recovery, and excellent thermal performance, delivering higher efficiency, faster switching, and greater power density.
The EPC2366, which comes in a compact 3.3 mm x 2.6 mm PQFN package, is suitable for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.
“With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beachhead across low-voltage applications that have long been dominated by silicon,” said Alex Lidow, EPC CEO and co-founder.
Engineering samples are available for qualified designs.
