Incize and Atomera partner on RF GaN-on-Si
Incize, a Belgian semiconductor characterisation and modelling company, and Atomera, a US semiconductor materials company, have announced a collaboration to enhance GaN-on-Si technologies for next-generation RF and power devices.
This partnership brings together Atomera’s proprietary MST — a thin silicon film that improves transistor performance, energy efficiency and reliability — with Incize’s characterisation platforms, covering substrate trap analysis, noise, linearity, thermal effects and RF performance from DC to mmWave.
“We are thoroughly delighted to collaborate with Atomera, whose MST technology has already demonstrated promising advantages in silicon-based devices,” said Mostafa Emam, CEO of Incize. “By leveraging our advanced RF technology enablement capabilities and applying them to Atomera’s innovation, we aim to unlock new frontiers of performance, efficiency and reliability in GaN-on-Si platforms.”
“Incize’s track record with GaN-on-Si and their superb measurement and modeling capabilities make them an ideal partner,” said Scott Bibaud, CEO of Atomera. “Together, we are exploring how MST can be harnessed to propel compound semiconductor devices forward and deliver truly groundbreaking solutions to our customers.”
