III-V Epi to show epitaxy services at SPIE Photonics West
III-V Epi, the fast turnaround UK manufacturer of low to medium volume III-V epitaxial structures, will be exhibiting at SPIE Photonics West 20th to 22nd January, Moscone Center, San Francisco. .
III-V Epi’s focus on speed to market; specialist knowledge of MBE and MOCVD manufacturing processes; and expertise in both GaAs and InP material systems makes it the ideal supply partner for a wide range of commercial and academic projects.
The company serves a variety of high-growth semiconductor and photonics markets, where manufacturing speed is key, but high consumer volumes are not required. Richard Hogg, CTO at III-V Epi (pictured above), will be available to discuss projects, applications and answer questions.
Calum McGregor, director of III-V Epi, said, “III-V Epi expedites manufacture of MBE and MOCVD epitaxial structures for semiconductor and photonics devices with more moderate production volume needs. This includes markets, such as defence, security and evolving quantum technologies, where, despite their often-critical nature, the need for small and medium volumes makes their production a low priority for suppliers absorbed in high-volume, consumer markets. III-V Epi services include specialist design, test, metrology, and characterisation; also an essential part of bringing innovative, collaborative photonics projects and devices to market quickly and efficiently."
He added: “III-V Epi also provides invaluable expertise in both GaAs and InP material systems, using MBE and MOCVD manufacturing processes. Many new and emerging computing, communications, space, fintech, healthcare, and defence markets favour GaAs for manufacturing flexibility, where we have valuable know-how. We also have extensive InP experience, widely used in datacoms, telecoms, AI and HPC.”
