Rohm develops 5th gen SiC MOSFETs
Rohm has developed the latest device of its EcoSiC series: the 5th Generation SiC MOSFETs optimised for high-efficiency power applications.
The technology is uitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centres.
Rohm was the first in the world to begin mass production of SiC MOSFETs in 2010. The newly developed 5th Generation SiC MOSFETs take this to another level achieving industry-leading low loss, driving the broader adoption of SiC technology.
Through structural enhancements and manufacturing process optimisation, ON resistance is reduced by approximately 30 percent during high temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions).
This improvement contributes to making units smaller while increasing output power in high temperature applications such as traction inverters for xEVs, according to the company.
Rohm began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026. Furthermore, starting from July 2026, Rohm will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.
Going forward, Rohm plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options.
