Toshiba Introduces Its First GaAs HBT Power Amplifier
MMIC Offers Single Power Supply, High Drain Efficiency and Higher Power Making it Ideal for CDMA and PCS Applications
Irvine, CA. Toshiba America Electronic Components, Inc. (TAEC) Monday announced it has developed the company s first RF gallium arsenide (GaAs) hetero-bipolar transistor (HBT) microwave monolithic integrated circuit (MMIC) power amplifier. Toshiba s new power amplifier, designated the TG2013F is Toshiba s first GaAs HBT device to be marketed in the United States.
The new GaAs HBT power amplifier is ideal for applications in 1.9 gigahertz (GHz) personal communications systems (PCS) and code-division multiple access (CDMA) systems. The new device offers high output power (Po) of 29dBmW, a single power supply of 3.6 volt (V), high gain of 24dB, efficiency to 30 percent, and low voltage standing wave ratio (VSWR) of less than three.
With a low VSWR, the device transmits more power rather than reflecting it, therefore making it more efficient. Offering a GaAs HBT power amplifier with bias circuit, this device provides better linearity than a silicon device. While the high output power and high gain (Gp) boosts the signal for transmission, the small package (5.3 x 6.4mm) enables engineers to create smaller design solutions.
An exclusive feature of Toshiba s GaAs HBT is the internal gain control amplifier, which prevents the final stage of the power amplifier from going into overdrive. In addition, Toshiba s unique temperature compensation circuit prevents the final stage of the power amplifier from breaking down due to overheating.
"In the increasingly competitive communications marketplace, Toshiba continues its leadership with an offering of high-quality and cost-effective RF solutions," said Brach Cox, business development manager, Toshiba s RF Business Unit. "Our customers have requested a GaAs-based power amplifier solution for high gain and low power consumption applications.
"The TG2013F represents Toshiba s first GaAs HBT power amplifier to be added to our RF family of products." With the TG2013F RF power amplifier s exclusive internal gain control amplifier and temperature compensation, Toshiba is able to lower system and manufacturing costs by simplifying the design process and reducing the number of parts.
According to Dataquest, the worldwide forecast for cellular and broadband PCS telephone handset shipments with the CDMA standard is to increase to 37.5 million units this year, and should reach 69 million units in 2002. (Source: Dataquest 1999 Market Forecast, March 8, 1999). Given this trend, Toshiba strives to compete in this growing market.
Packaging
The TG2013F is housed in a 20-pin high power small outline package (HSOP) type packaging measuring 5.3 x 6.4mm. The HSOP20 is a thin, flat package excellent for use in handsets, given the industry trend toward smaller and thinner handsets. -0- *T RF Power Amplifier Product Specifications:
Part Number: Po: Gp: Process: Packaging: TG2013F 29dBmW 24dB GaAs HBT HSOP20 *T Pricing and Availability:
Samples of Toshiba s TG2013F RF power amplifier device will be available next month, priced at $4.50 each in 1,000 piece quantities. Full production quantities will be available in Q2 00, and production pricing will be available at that time.
About Toshiba
Toshiba America Electronic Components, Inc. (TAEC) is the North American engineering, manufacturing, marketing and sales arm of Toshiba Semiconductor Co. and Display Devices and Components Co. TAEC is recognized as one of the world s largest suppliers of semiconductor, electronic component and storage solutions. Toshiba s Semiconductor Co. is one of the world s leading manufacturers and suppliers of semiconductor products including LSIs, microprocessors and controllers, and advanced memory products, in addition to discrete and bipolar components.
The company is also responsible for global sales and marketing of other major electronic components including liquid crystal displays, color display and picture tubes, lithium-ion and other secondary batteries. For additional information, visit TAEC s Web site at http://www.toshiba.com/taec. Editor s Note: Reader inquiries publish 800/879-4963, ext. 209 Photo available upon request, contact Kim Buckley at 714/245-7500.
Contact:
Toshiba America Electronic Components, Inc., Irvine
Carol Madden, 949/455-2231
E-mail: carol.madden@taec.toshiba.com
or
Benjamin Group/BSMG Worldwide
Suzanne Foxworth or Jan Johnson, 714/245-7500
E-mail: suzanne_foxworth@benjamingroup.com or
jan_johnson@benjamingroup.com
Toshiba America Electronic Components, Inc., Irvine
Carol Madden, 949/455-2231
E-mail: carol.madden@taec.toshiba.com
or
Benjamin Group/BSMG Worldwide
Suzanne Foxworth or Jan Johnson, 714/245-7500
E-mail: suzanne_foxworth@benjamingroup.com
or
jan_johnson@benjamingroup.com
E-mail: jan_johnson@benjamingroup.com
Web site: http://www.toshiba.com/taec
