Cree Demonstrates 28 Percent Quantum Efficient InGaN LED
Durham, NC. Cree Lighting Company reported that it has demonstrated a near-UV/violet InGaN light emitting diode (LED) with 28% quantum efficiency. This is the highest known external quantum efficiency publicly reported for an LED in the UV-to-blue portion of the wavelength spectrum. The LED emits at 400 nm and has a power output of 17 mW.
LEDs in the UV and near UV spectrum are particularly important for making white solid state light bulbs using phosphors to down convert the wavelength of the light emitter to the visible spectrum, then color mix to make a white bulb. High quantum efficiency is critical to making energy efficient solid state light bulbs. The Cree Lighting emitter demonstrated has overall (wall plug) efficiency of 22%.
CEO Neil Hunter said; "These are impressive results and demonstrate the substantial progress Cree Lighting has made to further improve the efficiency of LEDs. This technology has the potential to revolutionize the lighting industry by enabling solid state light bulbs with high efficiency in the years ahead."
North Carolina-based Cree, Inc. is the world leader in developing and manufacturing semiconductor materials and electronic devices made from silicon carbide (SiC). The company uses proprietary technology to make enabling compound semiconductors such as blue and green LEDs, SiC crystals used in the production of unique gemstones and SiC wafers that are sold for device production and research. Cree has new product initiatives based on its expertise in SiC, including radio frequency and microwave transistors for use in wireless infrastructure applications and radar, blue laser diodes for optical storage applications and high power devices for power conditioning and switching. For more information on Cree, visit http://www.cree.com.
This press release contains forward-looking statements involving risks and uncertainties that may cause actual results to differ materially from those indicated. Actual results could differ materially due to a number of factors, such as our ability to integrate acquired businesses with our current operations; the risk our customers may fail to honor contractual commitments; the risk that demand for our products may decrease; the risk of price reductions or other actions by competitors that may impair sales; the risk of manufacturing delays or increased costs due to variability in the complex processes used to manufacture our products; the possibility we may be unable to develop commercial products based on the new device technology described in this release or that we will experience delays or unexpected costs or that the new device technology may not be transferable to a SiC substrate; the risk of intellectual property claims relating to our products, including the risk of an adverse result in currently pending patent litigation; uncertainty whether our intellectual property rights will provide meaningful protection against competitors; the risk posed by concentration of our business among a few customers; and other factors discussed in our filings with the Securities and Exchange Commission, including our report on Form 10-K for the year ended June 27, 1999, subsequent quarterly reports and the registration statement on Form S-3 dated January 3, 2000.
Contact: Fran Barsky, Investor Relations Manager of Cree, Inc. Tel: 919-313-5397 Fax: 919-313-5452
Fran Barsky, Investor Relations Manager of Cree, Inc.
Tel: 919-313-5397
Fax: 919-313-5452
Web site: http://www.cree.com
