Vishay Intertechnology, Inc., Signs Silicon Carbide Technology Transfer Agreement with DaimlerChrysler
Source: Vishay Intertechnology
Malvern, PA. DaimlerChrysler and Vishay Intertechnology, Inc. (NYSE: VSH), today disclosed that they have signed a licensing agreement that will enable Vishay to undertake the high-volume manufacture of semiconductor products using DaimlerChrysler s Silicon Carbide (SiC) technology.
Under development at DaimlerChrysler AG since 1993, SiC technology enables the creation of semiconductor devices for compact power conversion systems in electric cars, railway systems, and other mobile applications. SiC devices in turn allow the design of smaller and lighter converter modules, which can be operated at the elevated temperatures typical of these systems.
A leader in the development of semiconductor devices using the new technology, DaimlerChrysler recently unveiled a 50-A Schottky diode built on SiC and measuring 16.8 mm (squared) -- a record device size for the new technology. DaimlerChrysler s research into SiC has encompassed all aspects of optimizing the technology for high-volume manufacture of products such as diodes and transistors. Since 1997, Vishay has co-sponsored DaimlerChrysler s work on SiC, with a focus on the development of SiC Schottky diodes for general applications.
"Both contract partners will benefit from this agreement," said Dr. Felix Zandman, Founder and Chairman of Vishay Intertechnology, Inc. "For Vishay, SiC represents a new and promising key technology with substantial market potential. DaimlerChrysler, on the other hand, profits from the semiconductor experience of this partnership and in addition gains access to a SiC-foundry."
SiC Schottky-diodes combine high breakdown voltages (up to 2000V) with a low forward voltage drop and negligible switching times. Comparable devices cannot be achieved with conventional Silicon technology, so a key application for the new SiC devices will be the replacement of fast Si-pin-rectifiers.
As an additional feature, SiC devices can be operated at much higher junction temperatures compared to silicon devices without compromising their electrical performance. This feature can be used for SiC-device miniaturization or to allow device exposure to higher ambient temperatures, opening the door for completely new fields of applications in which SiC devices are located in the direct vicinity of heat sources such as engines or electrical generators.
The packaging of SiC-Schottky-diodes will be based on existing surface-mount techniques as well as Sinterglass packaging technology, which is already used in many high-temperature applications.
Vishay Intertechnology, Inc. (NYSE: VSH), a Fortune 1,000 Company with an annual sales rate of $2.4 billion, is the largest U.S. and European manufacturer of passive electronic components (resistors, capacitors, inductors) and a major producer of discrete semiconductors (diodes, optoelectronics, transistors), IrDCs (infrared communication devices), and power and analog switching integrated circuits. The Company s components are vital to electronic operations and can be found in products manufactured in a very broad range of industries worldwide. With headquarters in Malvern, Pennsylvania, Vishay employs over 20,000 people in more than 60 plants in the U.S., Mexico, Germany, Austria, the United Kingdom, France, Portugal, the Czech Republic, Hungary, Israel, Taiwan (ROC), China and the Philippines. Vishay can be found on the Internet at http://www.vishay.com.
Contact: Andrew Post, Communications Manager of Vishay Intertechnology Tel: 610-251-5287 Fax: 610-889-9429 andrew.post@vishay.com
Andrew Post, Communications Manager of Vishay IntertechnologyTel: 610-251-5287
Fax: 610-889-9429
andrew.post@vishay.com
E-mail: andrew.post@vishay.com
Web site: http://www.vishay.com
