+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

ATMI expands GaAs epitaxy facility

ATMI has announced a planned expansion of its gallium arsenide epi capacity. A new 50,000 sq. ft. facility in Phoenix, Arizona is presently being facilitized to contain 11 Aixtron 2600 MOVPE high throughput reactors with space planned for 8 additional reactors.

Phil Yin, President of ATMI Services said, "We believe that the analog GaAs market will grow at rates well exceeding general semiconductor industry growth rates. One of the key drivers for this growth is the telecommunications industry including mobile handsets and other complementary wireless devices. These devices will require GaAs-based HBT epitaxial products. ATMI has demonstrated unique capability in the manufacture of InGaP-based HBTs, and we are presently in a sold out condition for these products."

Doug Neugold, President of ATMI said, "This expansion is a clear indication of ATMI s commitment to meeting its customers needs for GaAs epitaxial services and to ATMI s end goal of becoming the world s largest epitaxial service provider. ATMI is already the world leader in specialty silicon-based epitaxial services and is driving towards a similar position in silicon germanium.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: