New Super Brightness AlInGaP LED from UEC
Source: UEC
November 13, 2000
Hsinchu, Taiwan. One of the key high brightness AlGaInP light emitting diode (LED) epi-wafer and chip manufacturers, United Epitaxy Company, Ltd. (UEC), announced it has successfully developed a new LED structure which can double the light output compared to their old LED structure. In these new LEDs, several advanced technologies such as multiple quantum well (MQW), superior high reflectivity distributed Bragg reflector (DBR), current confining structure and surface roughing were applied for the fabrication of this new high brightness LED devices. The luminous efficiency of this new LED is about 20 to 30 lm/w and comparable to the best performance transparent substrate (TS) AlGaInP LED.
The new AlGaInP LEDs also exhibit very good electrical and thermal characteristics with typical forward voltage of 2.5 volt at 100mA. These new high brightness AlGaInP LED chips will be in mass production from January 2001.
Contact: Jack Yeh of UEC Tel: 886-3-5678000, ext-2521, Jack@uec.com.tw
Jack Yeh of UECTel: 886-3-5678000, ext-2521,
Jack@uec.com.tw
E-mail: Jack@uec.com.tw