+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

New Super Brightness AlInGaP LED from UEC

Source: UEC

November 13, 2000

Hsinchu, Taiwan. One of the key high brightness AlGaInP light emitting diode (LED) epi-wafer and chip manufacturers, United Epitaxy Company, Ltd. (UEC), announced it has successfully developed a new LED structure which can double the light output compared to their old LED structure. In these new LEDs, several advanced technologies such as multiple quantum well (MQW), superior high reflectivity distributed Bragg reflector (DBR), current confining structure and surface roughing were applied for the fabrication of this new high brightness LED devices. The luminous efficiency of this new LED is about 20 to 30 lm/w and comparable to the best performance transparent substrate (TS) AlGaInP LED.

The new AlGaInP LEDs also exhibit very good electrical and thermal characteristics with typical forward voltage of 2.5 volt at 100mA. These new high brightness AlGaInP LED chips will be in mass production from January 2001.

Contact: Jack Yeh of UEC Tel: 886-3-5678000, ext-2521, Jack@uec.com.tw

Jack Yeh of UEC
Tel: 886-3-5678000, ext-2521,
Jack@uec.com.tw
E-mail: Jack@uec.com.tw
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: