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News Article

Cree Lighting Company Demonstrates Record in LED Quantum Efficiency

Source: Cree, Inc.

Goleta, CA. Cree Lighting Company, a wholly- owned subsidiary of Cree, Inc. (Nasdaq: CREE), announced today that it has demonstrated a near-UV/violet InGaN light emitting diode (LED) with a 32% quantum efficiency. This is the highest known external quantum efficiency publicly reported for an LED in the UV-to-blue portion of the wavelength spectrum and exceeds previous results demonstrated by Cree Lighting in July 2000 by 20%. The LED demonstrated emits at 390 nm and has a power output of 21 mW operating at 20 mA.

LEDs in the UV and near UV spectrum are essential for making efficient solid state white light sources. The LED light optically excites phosphors that emit white light. High quantum efficiency is critical to making these energy efficient sources. These results are a continuation of a collaborative R&D effort funded in part by the U.S. Department of Commerce under the NIST Advanced Technology Program.

Mike Dunn, Vice President of Cree Lighting stated, "This result takes us beyond the 30% milestone in the UV-to-blue wavelength spectrum and brings us closer to the goal of a solid state product that can replace incandescent and fluorescent light sources."

California-based Cree Lighting Company, a wholly-owned subsidiary of Cree, Inc., is a leading developer of solid state technology for the next generation of lighting and electronics devices using silicon carbide (SiC) and gallium nitride (GaN) materials. North Carolina-based Cree, Inc. develops and manufactures semiconductor materials and devices based on SiC, GaN and related compounds. The company s products include blue and green LEDs, RF power transistors for use in wireless infrastructure applications, SiC crystals used in the production of unique gemstones and SiC wafers sold for use in research and development. Cree has new product initiatives based on its experience in SiC and GaN-based semiconductors, including blue laser diodes for optical storage applications, high frequency microwave devices for radar and other communication systems, and power devices for power conditioning and switching. For more information on Cree, visit http://www.cree.com.

This press release contains forward-looking statements involving risks and uncertainties that may cause actual results to differ materially from those indicated. Actual results could differ materially due to a number of factors, including the possibility we may be unable to develop commercial products based on this new device technology; the potential lack of customer acceptance of such products even if developed; the risk that the new device technology may not be transferable to a SiC substrate; the possibility we may be unable to manufacture such products with sufficiently low cost to offer them at competitive prices or with acceptable margins; and other factors discussed in our filings with the Securities and Exchange Commission, including our report on Form 10-K for the year ended June 25, 2000 and subsequent reports.

Contact: Fran Barsky, Investor Relations Manager of Cree, Inc. Tel: 919-313-5397 Fax: 919-313-5452

 

Fran Barsky, Investor Relations Manager of Cree, Inc.
Tel: 919-313-5397
Fax: 919-313-5452
 
Web site: http://www.cree.com
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