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Nitronex Expands With New Optoelectronics Division

Source: Nitronex Corporation

Extends Ease-of-Integration and Cost Advantages of Silicon-based GaN to New Markets

Raleigh, NC. Continuing its push to bring gallium nitride (GaN) components to commercial markets, Nitronex Corporation today announced the creation of an Optoelectronics Division. The new business unit will enable Nitronex to extend the design and cost advantages of silicon-based GaN to other markets, including lighting and data storage. Warren Weeks, a co-founder and vice president of Nitronex, was named general manager.

Nitronex also announced today that it has entered into an alliance with Microsemi Corporation (Nasdaq:MSCC) to fabricate a line of blue and ultraviolet LEDs -- the first ever on silicon substrates (see related release).

To date, Nitronex has focused on GaN-based components for use in wireless communications infrastructure. The company is unique in its ability to develop GaN components on large area, low-cost silicon wafers. Because silicon is the most common substrate available, customers will be able to easily integrate Nitronex components into product designs.

The new Optoelectronics Division will commercialize solid-state lighting and data storage solutions by leveraging the company s recent advances, including its proprietary low-defect density PENDEOTM process and SIGANTICTM platform technology.

Weeks brings blue and green InGaN-based LED (light emitting diode) and blue laser diode epitaxy and device processing expertise to the newly formed division. He is also a co-inventor of Nitronex s SIGANTIC platform technology.

"Customer interest in Nitronex s gallium nitride technology extends beyond wireless communications, and the Optoelectronics Division was a natural next step," said Bob Lynch, president and CEO, Nitronex.

Added Warren Weeks: "Our gallium nitride on silicon technology is the ideal platform for creating cost-effective, large junction-area LEDs. Additionally, vertically conducting device structures are also permissible using ordinary conductive silicon substrates. These same silicon substrates also offer unique processing routes for improving overall brightness."

Nitronex was founded in 1999 by four North Carolina State University graduate students researching gallium nitride. Recognizing its potential applications, the company was formed to commercialize advances made in the laboratory. The vertically integrated device company, which received $10.1 million in first-round financing, has numerous patents in various stages of the USPTO and PCT review process.

About Nitronex Nitronex is the only semiconductor company focused exclusively on gallium nitride (GaN). Its growth technologies enable superior performance and increased functionality across a breadth of industries, including wireless communications, solid-state lighting and data storage. Nitronex s PENDEO process is unique in its ability to reduce GaN crystal defects relative to other growth techniques. In combination with the PENDEO process, Nitronex is currently integrating GaN-based microelectronic and optoelectronic components on 4" silicon using its proprietary SIGANTIC platform.

Contact: Warren Weeks Nitronex Tel: 919 807 9100 ext 103 warren_weeks@nitronex.com or Jon Bornstein / Amanda Strickland Porter Novelli Convergence Group Tel: (919) 834-1016 / (919) 834-1269 jon.bornstein@pnicg.com amanda.strickland@pnicg.com

 

Warren Weeks
Nitronex
Tel: 919 807 9100 ext 103
warren_weeks@nitronex.com
or
Jon Bornstein / Amanda Strickland
Porter Novelli Convergence Group
Tel: (919) 834-1016 / (919) 834-1269
jon.bornstein@pnicg.com
amanda.strickland@pnicg.com
 
E-mail: amanda.strickland@pnicg.com
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