Showa Denko KK to Produce InGaP HBT Epiwafers
Source: Showa Denko KK
SDK, NTT-AT To Jointly Commercialize New High-Performance Semiconductor Wafers
Tokyo, Japan. Showa Denko K.K. (SDK) has concluded an agreement with NTT Advanced Technology Corporation (NTT-AT) under which SDKw ill begin contract manufacturing of indium gallium phosphide (InGaP) epitaxial wafers to be used in NTT-AT s hetero bipolar transistors (HBT).D emand for InGaP HBT epitaxial wafers is expected to grow steadily for usei n the next-generation cellular phones.
The InGaP HBT epitaxial wafer is drawing attention as a key material for devices in the third-generation cellular phones due to its advantages, including improved DC properties and high reliability. With the full-fledged start of the third-generation cellular phone services in thea utumn of this year, demand for InGaP HBT epitaxial wafers is expected toi ncrease sharply.
SDK has been producing InP polycrystal / monocrystal mirror and epitaxialw afers for optical fiber communications equipment. In particular, SDK is the leading manufacturer, both in terms of quality and sales volume, of those epitaxial wafers made by the metal-organic chemical vapor deposition( MOCVD) process. SDK has also been manufacturing semi-insulating gallium arsenide (GaAs) mirror wafers. The addition of the InGaP HBT epitaxial wafers further strengthens SDK s product portfolio in this sector.
SDK and NTT-AT have also concluded a technical tie-up agreement whereby SDK s compound semiconductor volume production technology is combined withN TT-AT s relevant epitaxial growth and device evaluation technologies, ensuring the production of high-quality InGaP HBT epitaxial wafers. Both parties will initiate joint efforts to develop markets for this product.
SDK will install new facilities in the existing clean room by September 2001 having the capacity to produce 500 pieces per month of InGaP HBT epitaxial wafers. In 2003, the production capacity will be increased to 2,000 pieces a month.
Under the medium-term consolidated business plan, SDK is committed to expanding its compound semiconductors business and maintaining its world-leading position and advanced technology level.
Reference
InGaP HBT epitaxial wafers will be used in high-frequency transmitter powera mplifiers for the third-generation cellular phones. These HBTs will be small in size, and have high amplifying efficiency and good linear gain with low strain. Compared with field effect transistors, HBTs show lower power strain in broadband region and lower electricity consumption, and canb e operated with a single power source. Compared with AlGaAs HBTs, InGaP HBTs have higher reliability and are advantageous in terms of manufacturingp rocess.
About Showa Denko
Showa Denko is a major manufacturer and marketer of chemical products serving a wide range of fields ranging from heavy industry to the electronic and computer industries. the company makes petrochemicals (ethylene, propylene), aluminum products (ingots, rods) electronic equipment (hard disks for computers), and inorganic materials (ceramics, carbons). The company has overseas operations and a joint venture with Netherlands-based Montell and Nippon Petrochemicals to make and market polypropylenes. In March 2001, SDK merged with Showa Denko Aluminum Corporation to strengthen the high-value-added fabricated aluminum productso perations, and is today developing next-generation optical communications-use wafers. Visit the company s website at www.sdk.co.jp.
Company Contact
Mr. Nobuhiro Kato
S howa Denko K.K, Tokyo
Tel. 81-3-5470-3235 or Fax 81-3-3431-6442
e-mail: nobuhiro_kato@sdk.co.jp
or
Tim Young
Nippon Digital Communications, Tokyo
Tel. 81-3-5623-1493 or Fax 81-3-3665-3992
e-mail: young@nippondigi.com.
E-mail: young@nippondigi.com
Web site: http://www.sdk.co.jp
