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News Article

RF Nitro First to Offer GaN-Based Transistors

Source: RF Nitro Communications

Charlotte, NC. RF Nitro Communications, Inc. announces the introduction of commercially available AlGaN/GaN High Electron Mobility Transistors. Transistor structures are available in chip form, fabricated on either sapphire or SiC substrates. Sapphire-substrated devices (NGN-125) offer lower cost, while delivering output power density of up to 2 W/mm at 10 GHz. Devices on SiC substrates (NGN-225) are able to dissipate more heat, allowing higher voltage operation and power density of up to 6.6 W/mm at 10 GHz. Nominal gate geometry of 0.35 µm x 1 mm on sapphire, and of 0.35 µm x 1.5 mm on SiC are currently available, enabling up to 10 W total power at 10 GHz.

"RF Nitro is the first company to make GaN-based transistors commercially available. Achieving this milestone reinforces RF Nitro s leadership in GaN technology, as we commercialize this new and exciting wide bandgap technology," states Dr. Joseph Smart, VP of Advanced Technology.

Each GaN transistor chip is individually characterized, with data including dc output and transfer characteristics, S-parameters, and low-bias RF power measurements at 10 GHz (Class B). Typical device specifications of the NGN-125 and NGN-225 products can be found in RF Nitro s on-line catalog. Application notes detailing recommended mounting and handling procedures are supplied with each device. Contact RF Nitro Communications for availability and current selection options.

Company Overview

RF Nitro Communications, Inc., an ISO 9001 registered company, is the world s leading supplier of gallium nitride (GaN) epitaxial materials for electronics applications. In addition, RF Nitro manufactures gallium arsenide (GaAs) and GaN devices, and integrated circuits for wireless and wireline infrastructure. With the development of custom chip and packaged GaAs ICs, RF Nitro has established global sales channels necessary to support high-volume customer demands. Furthermore, RF Nitro is pioneering the development of 4-inch GaN wafer technology to produce amplifiers for high-power, high-frequency applications. The synergy of these two semiconductor materials provides next-generation power products that meet the stringent cost goals of wireless and optical markets.

RF Nitro Communications, Inc.
10420 Harris Oaks Blvd., Suite F
Charlotte, NC 28269
 http://www.rfnitro.com
Web site: http://www.rfnitro.com

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