Raytheon MHEMT Foundry Process Enters Production
Offers Low Cost Alternative to GaAs pHEMT and InP HEMT Technologies
Andover, MA. Raytheon Company s RF Components Division has announced that their 4-inch Metamorphic High Electron Mobility Transistor (MHEMT) foundry process for microwave and millimeter-wave applications has transitioned into production.
The announcement was made by RRFC VP of Business Development, Russ Wagner, who said that the process significantly improves the manufacturability of low noise/high frequency devices at a cost that is lower than that of comparable InP HEMT structures.
According to Mr. Wagner, process results have shown excellent gain and noise performance, making MHEMT ideal for such applications as wide bandwidth amplifiers (TWA s) for fiber optic receivers, low noise millimeter wave receivers and automotive radar systems at 77 GHz.
The process, which employs self-aligned, selectively etched gates for high yields and excellent uniformity, routinely demonstrates an Ft>150 GHz and an optimum noise figure (Fmin) of
