Toshiba Introduces Family of Silicon Germanium Heterojunction Bipolar Transistors
High-Frequency Devices Reduce Power Consumption and Improve Reliability for Full-Featured Portable Communications Devices
Irvine, CA. Strengthening its commitment to the development of leading-edge radio frequency (RF) integrated circuit (IC) solutions, Toshiba America Electronic Components, Inc. (TAEC), today announced the introduction of Toshiba Corporation s family of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba s line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, currently offering one of the industry s lowest noise levels, and a high-power gain transistor, designated the MT4S101U.
Ideal for full-featured cellular phones and other portable wireless devices with wideband-CDMA (W-CDMA) and wireless LAN (WLAN) functionality, SiGe technology significantly reduces the power requirements of the HBT by combining the electrical properties of silicon and germanium to improve system performance.
"Today s high-end portable and wireless communications devices are driving the need for low-voltage components that can improve reliability while enhancing total system performance," said Ed Monzon, senior business development manager, Logic, Small Signal, RF and Microwave devices for TAEC. "By expanding our current portfolio of RFICs to include SiGe HBTs, Toshiba is responding to the need for RF components that enable high-volume data transmission while reducing power consumption."
Features
Toshiba s MT4S100U high frequency transistor utilizes the company s proprietary SiGe Epitaxial Base Bipolar Transistor Process (on wafer transition frequency: fT = 60 GHz) to maintain a VCEO of 3.5V and achieve one of the industry s lowest noise levels of NF = 0.7dB for a 2GHz silicon-based bipolar transistor. Toshiba also offers the MT4S101U high power gain transistor (Insertion Gain |S21|2=17.5dB @ IC = 20mA). Both SiGe HBT devices achieve peak performance using a price competitive silicon substructure and are packaged in a 4-pin surface mount small package USQ. Toshiba will utilize its expertise in packaging technology to develop smaller packaging in the near future.
Technical Specifications Part Number: MT4S100U MT4S101U Process: SiGe Epitaxial Base Bi-Polar Transistor Process SiGe Epitaxial Base Bi-Polar Transistor Process Features: SiGe Heterojunction Transistor (low noise, SiGe Heterojunction Transistor (high power gain) high frequency) NF (dB) *1: 0.7 0.8 Ga (dB) *1: 14.7 16.2 S21 (dB) *2: 16.7 17.5 Package Dimension: 2.1 x 2.0 x 0.95 2.1 x 2.0 x 0.95 Package Type: 4-pin surface mount small package USQ 4-pin surface mount small package USQ
VCE = 2V, f = 2GHz, *1: IC = 5mA, *2: IC = 20 mA
Pricing and Availability Samples of the MT4S100U and the MT4S101U are available now at a sample price of $0.30 each. Mass production is scheduled to begin December 2001 at an initial monthly volume of five million units.
*About TAEC TAEC offers the industry s broadest line-up of semiconductor, display and storage solutions for the computing, wireless, networking and digital consumer markets. Combining quality and flexibility with design engineering expertise, TAEC brings advanced next-generation technologies to its OEM customers.
TAEC is an independent operating company owned by Toshiba America Inc., a subsidiary of the $47.9 billion (FY 2000 recorded sales) Toshiba, the second largest semiconductor company worldwide in terms of global sales for the year 2000. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC s web site at www.chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
Tech.Questions@taec.toshiba.com. Photo is available upon request, please contact Jenice Sakai at (949) 428-3876.
Contact: Suzanne Collier Benjamin Group/BSMG Worldwide Tel: 480 792 9645 Fax: 949.260.1305 suzanne_foxworth-collier@benjamingroup.com
Suzanne CollierBenjamin Group/BSMG Worldwide
Tel: 480 792 9645
Fax: 949.260.1305
suzanne_foxworth-collier@benjamingroup.com
E-mail: suzanne_foxworth-collier@benjamingroup.com
Web site: http://www.chips.toshiba.com
