Giga Epitaxy Technology Completes Factory Construction
Source: Giga Epitaxy Technology Corp.
Giga Epitaxy Technology Corp. (hereunder written as GET) has completed the factory construction and the ceremony to celebrate the completion of the factory was performed on 21st of Sept. 2001.
GET was founded as a compound semiconductor manufacturer in May 2000 based on a joint venture agreement between LEE-TECH CO., LTD. OPTO-TECH CORPORATION, Sino-American Silicon Products Inc. and Hitachi Cable, Ltd (hereunder written as HCL) which is a leading company of supplying compound semiconductor epitaxial wafers in December 2000. And GET and HCL have signed Technology Transfer Agreement (TTA) and Original Equipment, Manufacturing (OEM) agreement to manufacture Metal-Organic Vapor Phase Epitaxial (MOVPE) wafers for Metal-Semiconductor Field Effect Transistors (MESFETs), HEMTs (High Electron Mobility Transistors) and HBTs (Hetero-junction Bipolar Transistors).
The construction of GET s factory was started in Yangmei Jen, Taoyuan Hsien from the end of last year and completed this September. The factory consists of a building with four stories above ground and two basement and auxiliary facilities. The three floors are used for clean rooms to manufacture and evaluate epitaxial wafers and the rests are used for offices, utilities to operate clean rooms, parking lots and others. The area of the clean room including a process room to make HBTs to evaluate epitaxial waters is about 2,200 sq. meters at the beginning and could be expanded up to about 4,000 sq. meters in the future. The operation of the clean rooms has been already started.
The installation of MOVPE reactors and the other equipment for manufacturing and evaluating epitaxial wafers have been completed and the preparation for the production has been just performed by GET s engineers and HCL s engineers delegated from HCL in unanimous cooperation. The training of GET s engineers in HCL according to TTA also has been completed. In the other equipment, high purity gas supply system, various kinds of evaluation equipment necessary for the quality assurance of MESFETs, HEMTs and HBTs, packaging system, factory monitoring system and others are included.
The evaluation samples for customers qualification will be shipped in the early 4Q of 2001.
The production capacity will be increased gradually up to about 2,000pcs per month with 6inch diameter epitaxial wafers for HBTs in 1Q in 2002 and about 3,000pcs per month in 2Q of 2002. The capacity could be increased up to about 12,000pcs per month in the present factory according to the market demand.
MESFETs, HEMTs and HBTs are key devices for the wireless communication and expected to show a big growth. Especially, handy phone sets and base stations for mobile phone systems are these devices main uses and they are indispensable for the 3G (=third generation of the mobile phone systems) whose services will be started on 1st of October in Japan and within 2 or 3 years in the other areas across the globe.
GET sincerely hopes to contribute the development of the wireless communication markets including the 3G by supplying the high quality epitaxial wafers for MESFETs, HEMTs and HBTs.
[Information about GET (1) Scope of Business; Manufacturing and Sales of Semiconductor Materials (2) Address; No.429,Gaush Road,Yangmei Jen,Taoyuan Hsien,Taiwan, R.O.C (3) Contact; Tel;03-2889368, Fax;03-2889356 (4) Chairman; Mr.Billy T.S. Wu (5) President; Mr.Hiroto Kawagoe
Contact:
M.Kashiwa
Executive Vice President
Giga Epitaxy Technology Corp.
No.429, Gaush Road,
Yangmei Jen, Taoyuan, Taiwan, R.O.C.
TEL : +886-3-2889368 Ext.103
FAX : +886-3-2889356
E-MAIL : mikio_kashiwa@getc.com.tw
M.Kashiwa
Executive Vice President
Giga Epitaxy Technology Corp.
No.429, Gaush Road,
Yangmei Jen, Taoyuan, Taiwan, R.O.C.
TEL : +886-3-2889368 Ext.103
FAX : +886-3-2889356
E-MAIL : mikio_kashiwa@getc.com.tw
E-mail: mikio_kashiwa@getc.com.tw
