New Raytheon Transimpedance Amplifier Offers Cost Effective Fiber Optic Solution
Andover, MA. Raytheon Company s (NYSE; RTNA; RTNB) RF Components Division has announced the introduction of a new high speed transimpedance amplifier (TIA) for 40 Gb/s (OC768) fiber optic systems.
Designated as the RMLA00400, the TIA is used in conjunction with a photodetector to convert optical signals into a voltage output or as a general purpose low noise wideband gain stage. The TIA is available in die form and is manufactured using Raytheon s advanced 4 - inch mHEMT process technology, which has recently transitioned into production. Key features include a high bandwidth of 40 GHz, low group delay and a low power dissipation of 450 mW. The unit is available on a 3.71mm x 1.70mm chip.
Announcing the availability of the new amplifier was Mr. Brian Reardon, RFC Sales Director, who said that the TIA answers the need for a cost effective process solution for applications requiring a high gain-bandwidth product. According to Mr. Reardon, the use of the mHEMT process allows Raytheon to significantly increase the manufacturability and lower the cost compared with competitive HEMT processes utilizing Indium Phosphide substrates.
One of the major advantages of the mHEMT process is that it achieves the high ---electron velocity normally only found in InP HEMTs, without the additional expense and manufacturability issues associated with InP substrate based devices.
According to Mr. Reardon, Raytheon s mHEMT process exhibits excellent linearity, gain and noise performance, making it ideal for such applications as wide bandwidth amplifiers (TWA s) for fiber optic receivers, low noise millimeter wave receivers and automotive radar systems at 77 GHz and above.
Commenting further on the impact of the new line was Mr. Colin Whelan, Raytheon Senior Scientist, who said that, "The metamorphic growth of high indium content HEMT devices on GaAs substrates opens the high frequency spectrum and the optical-to-electrical signal conversion space to traditional GaAs fabs. This technology has matured to the point where it is transitioning from development to manufacturing lines to realize the cost advantages of large diameter substrates."
Raytheon s RF Components Division is a developer and high volume manufacturer of components for the wireless communications industry. Included among an extensive list of products are GaAs MMICs, transmit and receive modules, and semiconductor devices. Applications include pHEMT and HBT power amplifiers, MESFET driver and low noise amplifiers. These products can be found in the market across a broad range of wireless handset and infrastructure applications. Other products include E/D upconverters for base stations, data communications systems, millimeter wave systems and mobile phones, as well as transmit/receive modules for space based communication and land based radar systems.
Contact: Brian Reardon Tel: 978 684-8663 or Pete Lentini Tel: 617 345-0822
Brian ReardonTel: 978 684-8663
or
Pete Lentini
Tel: 617 345-0822
