Conexant Achieves Breakthrough Silicon Germanium Process Technology Performance

Ultra High-Speed, SiGe200 Technology Ideal For Optical Communications Integrated Circuits

Newport Beach, CA. Conexant Systems, Inc. (Nasdaq: CNXT), a worldwide leader in semiconductor system solutions for communications applications, today announced that it has achieved breakthrough performance in its silicon germanium (SiGe) integrated circuit process technology.

Conexant s new SiGe200 process technology has demonstrated the highest performance reported to date for silicon-based transistors, with the highest combination of switching speed in current (transit frequency, or Ft, equal to 200 GHz) and in power (maximum frequency, or Fmax, equal to 180 GHz).

Reaching this performance milestone will bring the cost advantages of silicon technology to a broad range of highly integrated optical networking devices, providing ultra high-speed capability for up to 80 gigabits per second (Gbps) components and ultra-low power for multi-channel 10 Gbps circuits. Wireless communications devices will also benefit from the low noise, low power and improved linearity of this new process.

``Increasing optical communications data rates are driving the need for higher performance process technology, said Dwight W. Decker, Conexant chairman and chief executive.

``Our ultra-high speed SiGe200 process technology provides a clear path to the manufacturing technology required to deliver high-performance, cost competitive wireless and infrastructure components that will continue to drive communications advances.

Conexant s SiGe200 breakthrough technology evolved out of Conexant s proven 0.18 micron SiGe bipolar complementary metal oxide (BiCMOS) manufacturing process (SiGe120). The process incorporates a proprietary bipolar transistor design that can be scaled down in size to provide performance benefits, much like the scaling of transistors in standard CMOS technology. Until now, bipolar transistors have not been able to make use of aggressive lateral scaling due to limitations that have been overcome in the new approach.

In a presentation today at the IEEE International Electron Devices Meeting (IEDM) in Washington, D.C., Conexant will disclose details of its advances in silicon germanium (SiGe) process technology. Included in the presentation is a description of the steps that will be implemented in its SiGe200 manufacturing process to reach switching speeds, Ft and Fmax, and greater than 200 GHz performance.

About Conexant Conexant Systems, Inc. is a worldwide leader in semiconductor system solutions for communications applications. Conexant leverages its expertise in mixed-signal processing to deliver integrated systems and semiconductor products through two separate businesses: Conexant and Mindspeed Technologies.

Conexant s personal networking business is focused on wireless communications, digital infotainment and personal computing products that are used in mobile communications and the broadband digital home. Mindspeed Technologies designs, develops and sells a complete portfolio of semiconductor networking solutions that facilitate the aggregation, transmission and switching of data, video and voice from the edge of the Internet to linked metropolitan area networks and long-haul networks.

Conexant, headquartered in Newport Beach, Calif., delivered revenues of $1.1 billion for fiscal 2001, and has approximately 6,500 employees worldwide. The company is a member of the S&P 500 and NASDAQ-100 indices. To learn more, visit us at www.conexant.com or www.mindspeed.com.

Safe Harbor Statement This news release contains statements relating to future results of Conexant (including certain projections and business trends) that are ``forward-looking statements as defined in the Private Securities Litigation Reform Act of 1995. Actual results may differ materially from those projected as a result of certain risks and uncertainties. These risks and uncertainties include, but are not limited to: maintaining a consistent and reliable source of energy; global economic and market conditions, such as the cyclical nature of the semiconductor industry and the markets addressed by the company s and its customers products; demand for and market acceptance of new and existing products; successful development of new products; the timing of new product introductions; the availability and extent of utilization of manufacturing capacity; pricing pressures and other competitive factors; changes in product mix; fluctuations in manufacturing yields; product obsolescence; the ability to develop and implement new technologies and to obtain protection for the related intellectual property; the successful planned disposition of certain assets; the successful separation of the company s Internet infrastructure and personal networking businesses; the ability to attract and retain qualified personnel; labor relations of the company, its customers and suppliers; and the uncertainties of litigation, as well as other risks and uncertainties, including but not limited to the security and safety risks of our employees and of company facilities and those risks and uncertainties detailed from time to time in the company s Securities and Exchange Commission filings. These forward-looking statements are made only as of the date hereof, and the company undertakes no obligation to update or revise the forward-looking statements, whether as a result of new information, future events or otherwise.

Note to Technical Editors: A copy of Conexant s paper, ``Ultra High-Speed SiGe NPN for Advanced BiCMOS Technology, is available upon request.

Note to Editors: Conexant and Mindspeed are trademarks of Conexant Systems, Inc. Other brands and names contained in this release are the property of their respective owners.

Contact: Conexant Systems, Inc., Newport Beach Gwen Carlson (editorial) Tel: 949/483-7363 gwen.carlson@conexant.com