RFMD opens second GaAs HBT fab
The new fab is located in Greensboro, NC on the Company s headquarters campus.
The new fab is currently equipped to produce up to approximately 25,000 to 40,000 wafers per year. When the second fab is fully equipped and operating at full capacity it is expected to be capable of producing the equivalent of approximately 210,000 four-inch wafers per year, bringing the projected capacity of the Company s two GaAs HBT fabs to the equivalent of approximately 270,000 four-inch wafers per year.
The production schedule for the second fab is programmable, and the Company plans to continue equipping the second fab consistent with demand.
David A. Norbury, president and chief executive officer of RF Micro Devices, said, We expect this new facility will help us to serve and further diversify our customer base as it strengthens our technology leadership and contributes to ongoing reductions in cycle times.
The new fab has not only contributed to the addition of new customers, it has also been instrumental in the development of recent strategic relationships that represent incremental revenue opportunities for the Company, said Jerry Neal, executive vice president of sales, marketing and strategic development of RF Micro Devices.
Dean Priddy
Tel. +1 336 664-1233
Web site: http://www.rfmd.com
