Eagle-Picher demonstrates p-Type doping in ZnO
The films were grown on substrates produced by the Eagle Picher s SCVTTM (Seeded Chemical Vapor Transport) method. The ZnO layers showed carrier concentrations of ~1 x 1018 cm-3 and a mobility of 2 cm2/Vs. The measurements were taken and verified by Wright Patterson Air Force Base and Wright State University, Ohio.
This discovery will allow the development of various p-n device structures including UV emitters (LED and lasers) and detectors. Since ZnO is a transparent and conducting substrate, high efficiency LEDs are possible. With the addition of Mg to the compound, the deeper ultraviolet region of light emission can be reached, potentially reaching the solar blind region.
The Specialty Materials Unit, (formally, Environmental Science and Technology (ESAT) Department), has been involved with the research and development of II-VI compounds for over 50 years, developing such things as UV detectors of CdS, and blue and green LED s by homoepitaxy of ZnSe
Other products of the Specialty Materials Unit include; ultra high purity chemicals for the electronics and fiber optics industries, substrates for the photovoltaic industry, and custom made products for the electro-optic and telecommunications industries.
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