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Bandwidth Semiconductor Opens New Compound Semiconductor Fab

Bandwidth Semiconductor has expanded its operations from a 4,000 sq. ft. fab in Bedford, Massachusetts into a new 13,500 sq. ft. state of the art foundry housed in a 50,000 sq. ft. building with an additional 40,000 sq. ft. for expansion in Hudson, New Hampshire. In the New Hampshire facility, Bandwidth operates a complete compound semiconductor growth and device fabrication line in class 100/1000 cleanrooms.

Many advancements in MOCVD and fab equipment in the new facility enhance Bandwidth s technical capabilities including the purchase of a new multi-wafer MOCVD reactor designed for the growth of GaAs and InP-based compounds. This advanced reactor provides outstanding wafer reproducibility and uniformity on up to 4" diameter wafers.

Bandwidth s expertise in merchant compound semiconductor epitaxy is extensive. Bandwidth s experienced MOCVD engineers, initially from Spire Corporation, from which Bandwidth was spun off in Dec. 1999, have been developing and growing demanding III-V optoelectronic, RF and microwave structures for more than 20 years.

Bandwidth Semiconductor designs, develops and manufactures optoelectronic and other compound semiconductor devices on an OEM basis. Some of the OEM devices provided include lasers, detectors and other custom devices.

Bandwidth also offers Custom Processing Services of GaAs and InP. Bandwidth Semiconductor can supply epi wafers or customers can supply their own material. Services provided include processing, on-wafer and device test, die separation and prototype packaging.

Bandwidth Semiconductor is a wholly owned subsidiary of Stratos Lightwave, Inc. Caren Morningstar
Administrative Manager
Bandwidth Semiconductor
Tel. 603 689 1220
E-mail: cmorningstar@bandwidthsemi.com
Web site: http://www.bandwidthsemi.com

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