Japanese IDM qualifies WIN Semiconductors' InGaP HBT process
WIN s 2 micron InGaP HBT process has demonstrated a record-setting level of performance with 4 watt output and 75% associated power added efficiency at 1.9 GHz. Such performance can greatly reduce the power consumption and prolong the life of handset batteries. This performance has been verified both through internal testing and by several US customers. The Company has attracted over 40 international Integrated Device Manufacturing (IDM) and design houses to start engineering runs for handset, wireless local area network (WLAN), and Bluetooth power amplifier applications.
The Company continues to advance 6 inch GaAs manufacturing technology in general, as well as making specific advances in the technology associated with both HBT and pHEMT manufacturing. In light of these advances, coupled with the aforementioned achievements, members of WIN s technical staff will present three papers addressing HBT technology, pHEMT technology and 6 inch GaAs manufacturing technology, at a major international conference this April.
These successes demonstrate that WIN can support customer demand for GaAs MMICs in its 6 inch manufacturing environment. Nevertheless, the total qualifying activity, for both process and product qualification for GaAs technology, is time consuming. The interval from initial process qualification, through design-in and product qualification, to production can be as much as 1.5 years. In addition to been qualified by the Japanese IDM house, WIN expects to complete this qualification interval and begin production with several customers this year.
"WIN has continuously delivered advanced technologies and services that provide our customers with competitive advantages," said Dr. CS Wu, President & CEO of WIN, "These successful results demonstrate WIN s capability to produce state-of-the-art 2 micron HBT technology. This excellent performance was achieved through the dedicated efforts of the technical staff that WIN recruited both locally and worldwide. Due to this outstanding performance, and in recognition of its technology, WIN will present 3 papers on HBT and pHEMT technology as well as 6 inch GaAs wafer manufacturing technologyat the upcoming GaAs Mantech conference.
"No doubt 6 inch wafer manufacturing will be mainstream for GaAs MMIC in the twenty-first century," emphasized Dr. CS Wu, "Compared to 4 inch or 5 inch wafer manufacturing technology, 6 inch wafers are expected to deliver significant advantages in cost, yield, quality, and productivity. With the outstanding technology and production performances of WIN s 6 inch Fab, the company has clearly demonstrated, once again, world class manufacturing capability."
WIN manufactures 6 inch GaAs HBT and PHEMT MMIC wafers using a 0.15-micron process. The company has also started to make wafers with a final thickness of 50 micron accessible to its customers. WIN s Fab currently has a capacity of 1,500 x 6 inch wafers per month. With the completion of phase 2 cleanroom construction and installation of new equipment, the capacity is expected to reach 4,500 6 inch wafers per month by the end of this year. The full production capacity for this Fab is 100,000 wafers per year.
Ruth Pao
Public Relations
WIN Semiconductors Corp.
Tel: +886-3-3975999 ext. 1101
Fax: +886-3-3975668
E-mail: ruthpao@winfoundry.com
Web site: http://www.winfoundry.com
