Technical Insight
Atmel offers 45 GHz SiGe process (GaAs News)
Atmel (San Jose, CA) has unveiled an advanced SiGe BiCMOS process technology developed for telecommunications and high-speed data applications up to 12 GHz. The process offers bipolar speeds of up to 45 GHz, 3.3 V CMOS operation with a 5.0 V I/O option, and a complete digital standard cell library. The AT46000 process is supported by a Cadence design kit and is the first of several processes offered in Atmel s SiGe BiCMOS roadmap.
