Technical Insight
Cree's high-power UV LEDs target illumination markets (LED News)
Cree has introduced a new 405 nm UV LED for illumination markets, including automotive interiors, cell phone backlights and displays. The InGaN-on-SiC device provides an output of 12 mW at 20 mA, and employs a chip with a junction area of 240 mm 240 mm. Cree claims the device is the brightest nitride-based LED currently available. The LED, which will be used primarily to produce white light in combination with a suitable phosphor, results from a collaborative R&D effort between Cree and the Advanced Technology Program of NIST, the US department for standards. "UV LEDs offer a superior approach to producing white light compared with alternative methods using blue LEDs with a yellow phosphor coating," commented Jim Speck of UCSB s Solid State Lighting Center. "This is due to better color rendering, manufacturability, color temperature and control. Cree s UV chip will play a critical role in developing new white light applications." Cree is currently sampling devices and will begin volume production later this year.
