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Thursday 10th July 2014
Market expected to grow at 12.63 percent CAGR from 2014 to 2020
Thursday 10th July 2014
New report forecasts rising use of quantum dot displays for smartphones and tablet PCs
Wednesday 9th July 2014
Study demonstrates possibility of using GaN layers to make flexible transparent substrates
Wednesday 9th July 2014
Report estimates a CAGR of 33.1 percent from 2013 through 2018
Wednesday 9th July 2014
Fully-matched, two-stage GaN module provides true surface mount solution 
Wednesday 9th July 2014
CODICO partnership expands coverage in Central and East European, Italian and Danish markets for GaN-on-Si LED products
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Tuesday 8th July 2014
Ten fold improvement in efficiency for proposed new range of cleantech LEDs
Tuesday 8th July 2014
Website lets buyers and sellers set prices for pre-owned MOCVD, PVD and IBE equipment
Tuesday 8th July 2014
Ajit Manocha takes up post of executive vice chairman 
Tuesday 8th July 2014
New family of eGaN FETs enable power converters with greater than 98 percent efficiency  
Monday 7th July 2014
11.8 percent price drop in June 2014 from year earlier
Monday 7th July 2014
Strategic restructuring expected to lower manufacturing and operating costs by approximately $15 million annually
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Monday 7th July 2014
Acquisition marks strategic move into advanced packaging and MEMS markets
Monday 7th July 2014
GaN devices could reach more than 20 percent of the overall RF device market by 2020
Friday 4th July 2014
Higher light extraction efficiency results from a novel architecture formed by laser drilling and photochemical etching
Friday 4th July 2014
In-situ annealing nearly doubles electron mobility in InGaAs MISFETs
Thursday 3rd July 2014
Estimated market size of almost $600M by 2020
Thursday 3rd July 2014
Stand-alone company will combine Lumileds and automotive lighting
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Thursday 3rd July 2014
Enkris demonstrates high voltage GaS HEMT structures on 200mm silicon with Aixtron MOCVD tool
Thursday 3rd July 2014
Million times higher intensity frequency-doubled output
Thursday 3rd July 2014
High volume 2in GaN substrates with reduced dislocation densities
Wednesday 2nd July 2014
III-V layers as next generation channel materials
Wednesday 2nd July 2014
Belgian nanoelectronics centre offers great working conditions for researchers
Wednesday 2nd July 2014
With 400 MOCVD reactors, this is more than double its nearest competitor

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