Infineon brings out new 1200V CoolSiC MOSFET
Next generation automotive-graded SiC MOSFET in TO263-7 enables bi-directional charging
Infineon has anounced a new generation of 1200 V CoolSiC MOSFETs in TO263-7 for automotive applications. The automotive-graded SiC MOSFETs are designed to offer high power density and efficiency, enable bi-directional charging, and to reduce system cost in on-board charging (OBC) and DC-DC applications.
The new 1200 V CoolSiC family member has 25 percent lower switching losses compared to the first generation. This improvement in switching behaviour enables high-frequency operation, leading to smaller system sizes and increased power density. With a Gate-source threshold voltage (V GS(th)) greater than 4 V and a low Crss/ Ciss ratio, reliable turn-off at V GS = 0 V is achieved without the risk of parasitic turn-ons. This allows for unipolar driving, resulting in reduced system cost and complexity. In addition, the new generation features a low on resistance (R DS(on)), reducing conductive losses over the whole temperature range of -55°C to 175°C.
According to Infineon, the advanced diffusion soldering chip mount technology (.XT technology) significantly improves the package's thermal capabilities, lowering the SiC MOSFET junction temperature by 25 percent compared to the first generation.
Moreover, the MOSFET has a creepage distance of 5.89 mm, meeting 800 V system requirements and reducing coating effort. Infineon is offering a range of R DS(on) options to cater to diverse application demands, including the only 9 mΩ type in the TO263-7 package currently on the market.
KOSTAL uses CoolSiC MOSFET in OBC platform
KOSTAL Automobil Elektrik has designed Infineon’s latest CoolSiC MOSFET into its next-generation OBC platform for Chinese OEMs.
“Decarbonisation is the major challenge of this decade and thus a great motivation to shape car electrification with our customers. Therefore, we are very proud about the partnership with KOSTAL,” said Robert Hermann, VP for Automotive High Voltage Chips and Discretes at Infineon. “This project highlights the strong position of our standard product portfolio within the on-board charger market enabled by cutting-edge SiC technology.”
“As key component for our future generation OBC platform, Infineon’s new 1200 V CoolSiC trrench MOSFET features high voltage rating and qualified robustness. These benefits help us in to create a compatible design to manage our state-of-art technical solutions, cost optimisation and massive market delivery,” said Shen Jianyu, VP, technical executive manager at KOSTAL Asia.