CNIPA validates EPC GaN patents
IP battle with Innoscience takes new turn with Chinese validation of two EPC GaN patents
US GaN company Efficient Power Conversion Corp (EPC) has announced that the China National Intellectual Property Administration (CNIPA) has validated the claims of EPC patent titled 'Compensated gate MOSFET and method for fabricating the same' (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.
The decision on April 30, 2024 follows an April 2, 2024 announcement from the CNIPA that confirmed the validity of key claims of EPC’s Chinese patent titled 'Enhancement mode GaN HEMT device and method for fabricating the same' (Chinese Patent No. ZL201080015388.2). Both EPC patents were challenged by the Chinese company Innoscience.
Chinese Patent No. ZL201080015425.X covers the fundamental design and configuration of EPC’s proprietary enhancement mode GaN field effect transistors (FETs) with reduced gate leakage. Most industry participants employ the GaN gate technology covered by this patent.
“These are two of the foundational patents supporting our broad portfolio of innovations, and we are pleased that the CNIPA has again confirmed the validity of our valuable intellectual property,” said Alex Lidow, CEO and co-founder of EPC. “Quick, fair and efficient decisions such as these reinforce the confidence in legal systems that companies need to operate globally.”
In May 2023, EPC filed complaints in the US. federal court in Los Angeles and in the US. International Trade Commission, asserting that Innoscience (Zhuhai) Technology and its affiliates infringe patents of its foundational patent portfolio, which include the US. counterparts of EPC’s Chinese Patent Nos. ZL201080015425.X and ZL201080015388.2. In response, Innoscience had petitioned the CNIPA to invalidate the two Chinese patents.
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