India's DRDO announces GaN and SiC milestones
India's Defence Research and Development Organisation (DRDO) has announced a significant milestone in semiconductor technology by developing indigenous methods for producing 4-inch SiC wafers and fabricating GaN HEMTs up to 150W.
A statement from the Indian Ministry of Defence said that these advancements, achieved by the DRDO's Solid State Physics Laboratory (SSPL), also include MMICs with power capabilities up to 40W, suitable for applications extending to X-band frequencies.
The establishment of indigenous GaN on SiC-based MMIC production has been successfully implemented at GAETEC (Gallium Arsenide Enabling Technology Centre) in Hyderabad.
These technologies are considered essential for modern combat systems, radar technologies, electronic warfare, aerospace, satellite communications, and green energy initiatives.
