Diamfab and HiQuTe Diamond announce partnership
Diamfab, a semiconductor diamond company, and HiQuTe Diamond, a plasma-assisted CVD synthetic diamond startup, have announced a partnership covering substrate production, epitaxy of doped layers, and device manufacture.
Both companies are spin-offs from CNRS laboratories; the Institut Néel for Diamfab and the LSPM (Laboratoire des Sciences des Procédés et des Matériaux) for HiQuTe Diamond.
HiQuTe Diamond will contribute its expertise in the production of diamond substrates. Diamfab will be responsible for epitaxy as well as the manufacture of components.
The two companies plan to begin the collaboration with the manufacture of a series of vertical Schottky diodes on HiQuTe Diamond substrates using diamond epitaxy optimised by Diamfab. The first prototypes are expected in Spring 2025.
“Power semiconductors are at the heart of the growth of the world's economies. With performance levels between 10 and 40 times higher than components based on conventional materials, diamond semiconductors are key to widespread adoption of electrification and the decarbonisation of entire sectors of the economy. By working with HiQuTe Diamond, we have the will and the technological, human and geographical resources to create this sector of excellence in France, " commented Gauthier Chicot, CEO of Diamfab.
Florent Alzetto, CEO of HiQuTe Diamond, said: “The plasma-assisted CVD growth process makes it possible to produce boron-doped diamonds that are specifically adapted to the demanding applications of power electronics. This sustainable process ensures rigorous control of physical properties, while meeting performance challenges. The convergence of our expertise and that of Diamfab offers unprecedented opportunities to meet global industrial challenges in terms of performance and energy efficiency”.
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