Mitsubishi samples new SiC-MOSFET bare dies
Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power.
These new power semiconductor bare dies will contribute to efforts to embed advanced bare dies in various power electronics equipment to lower power consumption while maintaining performance, according to the company.
Mitsubishi Electric will exhibit the new trench SiC-MOSFET bare dies at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, as well as exhibitions in North America, Europe, China, India and elsewhere.
The four new trench SiC-MOSFET bare dies are similar to the company’s existing trench SiC-MOSFET bare dies, but use a proprietary trench SiC-MOSFET structure to reduce power loss by approximately 50 percent compared to planar SiC-MOSFETs.
Furthermore, manufacturing processes including Mitsubishi Electric’s proprietary gate oxide film manufacturing method suppress variations in power loss and on-resistance to ensure stable quality over a long period of use.
