Toyota picks Infineon SiC chips for new SUV
Infineon's CoolSiC MOSFETs have been adopted in the new bZ4X model from Japanese car companyToyota.
Integrated into the on-board charger (OBC) and DC/DC converter, the SiC MOSFETs leverage the material's advantages of low losses, high thermal resistance, and high voltage capability to help extend driving range and reduce charging time.
"We are very proud that Toyota, one of the world's largest automakers, has chosen Infineon's CoolSiC technology. SiC enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility." said Peter Schaefer, executive VP and chief sales officer automotive at Infineon.
Infineon says its CoolSiC MOSFETs feature a trench gate structure that reduces normalised on-resistance and chip size, enabling reductions in both conduction and switching losses to contribute to higher efficiency in automotive power systems.
In addition, optimised parasitic capacitance and gate threshold voltage enable unipolar gate drive, contributing to simplification of drive circuits for automotive electric drive train and supporting high-density, high-reliability design for OBC and DC/DC converters.
