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Mitsubishi Electronics Offers Compact, Battery-Saving GaAs FET Amplifier for PCS Band CDMA Cellular Phone Applications

Low Idle Drain Current, Low Operating Voltage and Improved Power Efficiency Add to Life of Lithium-Ion Batteries

SUNNYVALE, Calif. Mitsubishi Electronics America s Electronic Device Group today announced the North American availability of a low-voltage, low-current, high-efficiency three-stage gallium arsenide (GaAs) field effect transistor (FET) RF amplifier module for PCS Band (1.85 - 1.91 GHz) CDMA cellular phone applications. The amplifier, FA01384, features an extremely low idle drain current (Idq) of only 85 mA (typical), improved power efficiency to 37 percent, and a low 3.2-volt operating voltage that allows for 10 percent more conversation time in cellular phone applications. The module also has a compact 7.5 x 7.5 x 1.7 mm footprint.

"This new amplifier is specifically targeted to extend the battery life of CDMA cellular phones while supplying all the power and features customers have come to expect, all within a compact footprint," said Bryon Gutow, product marketing manager for microwave/RF products at Mitsubishi Electronics America. "This amplifier s power saving design saves battery life whether the cellular phone is being used or is in idle mode."

The amplifier also maintains 700 mW of output power with an excellent linearity of -29 dBc. The module is input/output matched at 50 ohms.

Packaging, Availability and Pricing

Mitsubishi s FA01384 GaAs FET RF amplifier module is available in a metal capped, glass-ceramic package. The device is now sampling and in volume production. Pricing is $7 each in 10,000-unit quantities.

About Mitsubishi Electric and Mitsubishi Electronics America

Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise and high-power communications applications, including satellite and terrestrial transmitters and receivers, marine and vehicular mobile radios, cellular phones and subscriber units. The company produces gallium arsenide (GaAs) FETs, MICs, MMICs and HEMTs; silicon RF power transistors and modules; and surface acoustic wave (SAW) filters for the industrial and consumer markets. Mitsubishi markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electronics America.

Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electronics America Inc., are world-class suppliers of semiconductors and electronic products for computers, communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including embedded DRAM/flash/SRAM, ASIC, ASSP, MCU, discrete memory, graphics, microwave/RF, optoelectronic, storage, and flat-panel display products

Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com.

CONTACT: Mitsubishi Electronics America Inc. John Garner, 408/774-3191 garner_john@edg.mea.com KVO Public Relations Julianne Whitelaw, 530/888-9285 julianne_whitelaw@kvo.com

 

Mitsubishi Electronics
America Inc. John Garner, 408/774-3191 garner_john@edg.mea.com
KVO Public Relations Julianne Whitelaw, 530/888-9285 julianne_whitelaw@kvo.com
 
E-mail: julianne_whitelaw@kvo.com
Web site: http://www.mitsubishichips.com
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