Mitsubishi Electronics' HFET Technology Boosts Output Power, Gain, and Efficiency of High-Power GaAs FETs for Base-Station and Satellite Communications Power Amplifiers
Power Boost Enables Customers to Design Smaller and Lighter Base-Station and Communications Units
BOSTON, MA. (IEEE MTT-S International Microwave Symposium). Mitsubishi Electronics America s Electronic Device Group today announced four new gallium-arsenide (GaAs) field effect transistors (FETs) for base-station and satellite communications power amplifiers. The new devices feature a hetero-junction FET (HFET) technology that incorporates a number of significant improvements, including the use of a new hetero-structure epitaxial technology, adoption of a T-shaped gate structure, and the employment of a new gate metallization system. The resulting device produces 160 watts of output power at S-band (an increase of 130 watts compared to previous-generation devices) and paves the way for even higher power devices in the future.
"Mitsubishi s innovative new HFET design enables significantly higher power levels in GaAs devices than have previously been possible," said Skyler Child, strategic marketing manager for microwave/RF products at Mitsubishi Electronics America. "Customers designing base stations requiring high peak to average power will especially appreciate the performance of the new devices, which are ideally suited to new 3G cellular base-station designs."
Introductions in the new HFET family of devices include:
MGFS52V2122 -- a 160-watt, push-pull configuration, power transistor intended for use in W-CDMA base stations operating in the 2.1- to 2.2-GHz range (S Band). Typical output power (P2dB) is 52 dBm and typical power gain (GLP) is 11 dB at 2.12 GHz. -- MGFS48V2527 -- a 60-watt, push-pull configuration, power transistor intended for use in MMDS transmitters operating in the 2.5- to 2.7-GHz range (S Band). Typical output power at P2dB is 48 dBm and typical GLP is 10 dB across the band. -- MGFL48V1920 -- a 60-watt watt, push-pull configuration, power transistor intended for use in PCS base stations operating in the 1.9- to 2.0-GHz range (L Band). Typical output power at P2dB is 48 dBm and typical GLP is 11.5 dB across the band. -- MGFC47V5864 -- a 50-watt watt, single-ended, internally matched configuration, power transistor intended for use in solid-state power amplifiers operating for VSAT applications operating in the 5.8- to 6.4-GHz range (C-band). Typical output power at P2dB is 47 dBm and typical GLP is 9.5 dB across the band.
Packaging and Availability
Mitsubishi s MGFS52V2122, MGFS48V2527, MGFL48V1920, and MGFC47V5864 GaAs FETs are each available in a hermetically sealed metal-ceramic, low thermal-resistance package.
Samples of the MGFS52V2122 device are available now, with volume production scheduled for the fourth quarter of 2000. The MGFS48V2527 and MGFL48V1920 devices are now in volume production. Samples of the MGFC47V5864 are scheduled to be available in July 2000, with volume production scheduled for the first quarter of 2001.
About Mitsubishi Electric and Mitsubishi Electronics America
Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise and high-power communications applications, including satellite and terrestrial transmitters and receivers, marine and vehicular mobile radios, cellular phones and subscriber units. The company produces gallium arsenide (GaAs) FETs, MICs, MMICs and HEMTs; silicon RF power transistors and modules; and surface acoustic wave (SAW) filters for the industrial and consumer markets. Mitsubishi markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electronics America.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electronics America Inc., are world-class suppliers of semiconductors and electronic products for computers, communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including embedded DRAM/flash/SRAM, ASIC, ASSP, MCU, discrete memory, graphics, microwave/RF, optoelectronic, storage, and flat-panel display products. Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com.
Keywords
Mitsubishi, GaAs FET, W-CDMA, MMDS, PCS, power amplifier, microwave.
Contact: Mitsubishi Electronics America Inc. John Garner, 408/774-3191 garner_john@edg.mea.com
Mitsubishi Electronics America Inc.
John Garner, 408/774-3191
garner_john@edg.mea.com
E-mail: garner_john@edg.mea.com
Web site: http://www.mitsubishichips.com
