A T M I Announces Optical Materials Initiative; Gallium Nitride Wafer and Epi Expansion to Support Blue Laser Development
Source: ATMI
Danbury, CT. A T M I, Inc. (Nasdaq: ATMI), today announced a significant expansion of an on-going venture to manufacture high performance optical materials used in the development of blue laser diodes.
For the past two years, ATMI has maintained a venture activity to develop gallium nitride (GaN) wafers suitable in size and quality for volume manufacturing of blue laser diodes. GaN has been demonstrated to be the optimal material for solid state light generation, however, large area GaN wafers are not commercially available due to the difficulty of producing bulk GaN crystals. Commercial blue light emission devices use sapphire or silicon carbide wafers and GaN epitaxy, but lattice mismatches in these materials produce defects that limit electronic and optoelectronic device development.
ATMI has developed and patented processes that allow the manufacture of high purity GaN wafers 50mm and larger in diameter. Based on recent successes, ATMI has committed significant additional funding for continued development and pilot manufacturing capacity. In addition, ATMI has recently been awarded contracts totaling nearly $4M from the Office of Naval Research (ONR) and the Ballistic Missile Defense Operation (BMDO) to further develop GaN wafers for electronic and optoelectronic devices.
Dr. George Brandes, General Manager of the ATMI GaN Venture, said, "The forecasted markets for blue laser diodes and related devices are valued at several billion dollars. Blue laser diodes could not only nearly quadruple data storage on such media as DVDs, but also provide the means by which higher resolution printing and crisp, full color projection displays could be achieved. Furthermore, we believe blue or ultraviolet light emission produced from light emitting diodes formed from GaN layers on GaN wafers offers a promising pathway for generating white light, facilitating entry into the worldwide lighting market."
Dr. Bob Vaudo, GaN Wafer Project Manager indicated, "ATMI s GaN wafers are expected to dramatically impact the performance of high frequency electronic and short-wavelength optoelectronic devices. High crystalline quality GaN wafers will enable high device density and improved device performance. Conventional growth techniques cannot be used to produce large area GaN wafers. ATMI s patented hydride vapor phase epitaxy (HVPE) process produces large area, low defect density GaN wafers that permit simplified device structures, improved heat dissipation and lower device defect density."
A T M I provides specialty materials and related equipment and services to the worldwide semiconductor industry.
Statements which are not historical information are forward looking, and involve risks and uncertainties, including, but not limited to: changes in semiconductor industry growth or A T M I s markets; competition, problems, or delays developing and commercializing new products; problems or delays in integrating acquired operations and businesses into A T M I; and other factors discussed in A T M I s filings with the Securities and Exchange Commission. Such risks and uncertainties could cause actual results to differ from those projected. http://web.atmi.com
Contact: A T M I, Inc., Danbury Dean Hamilton Tel: 203 794-1100 dhamilton@atmi.com
A T M I, Inc., Danbury
Dean Hamilton
Tel: 203 794-1100
dhamilton@atmi.com
E-mail: dhamilton@atmi.com
Web site: http://web.atmi.com
